Gupta, H. M.2014-05-202014-05-201992-03-30Journal of Physics-condensed Matter. Bristol: Iop Publishing Ltd, v. 4, n. 13, p. 3507-3515, 1992.0953-8984http://hdl.handle.net/11449/34412The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We present analytical expressions for the electrical potential, field, thickness of depletion region, capacitance, and charge accumulated in the depletion region. We also discuss ln I versus V(ap) data. Finally, we compare the characteristics in three cases: (i) impurity states at only a single energy level; (ii) uniform energy distribution of impurity states; and (iii) exponential energy distribution of impurity states.In general, the electrical characteristics of Schottky barriers and metal-insulator-metal structures with Schottky barriers depend strongly on the energy distribution of impurity states.3507-3515engArtigo10.1088/0953-8984/4/13/013WOS:A1992HM84900013Acesso restrito