Da Silva, Jeveson Cardoso [UNESP]Martins, Everson [UNESP]Junior, Nilton Graziono [UNESP]De Andrade, Maria Glória Caño [UNESP]2023-07-292023-07-292022-12-31Journal of Integrated Circuits and Systems, v. 17, n. 3, 2022.1872-02341807-1953http://hdl.handle.net/11449/249709For the first time, Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI) n-channel with Dynamic Threshold MOS configuration (DTMOS) using the SELBOX (Selective Buried OXide) sub-strate was analyzed. The drain and substrate current, transcon-ductance (gm) and Subthreshold Slope (SS) ware compared in the DTMOS mode and the standard biasing configuration for different gap width (WGAP) of SELBOX. Additionally, the out-put conductance and the transconductance gain also studied through numerical simulations. The results indicate that the SELBOX structure in DTMOS mode is competitive candidates for analog applications.engAnalog per-formanceDTMOSSELBOXUTBB SOIArtigo10.29292/jics.v17i3.6412-s2.0-85149119774