Moura, F.Aguiar, E. C. [UNESP]Longo, Elson [UNESP]Varela, José Arana [UNESP]Simões, Alexandre Zirpoli [UNESP]2014-05-202014-05-202011-03-03Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 509, n. 9, p. 3817-3821, 2011.0925-8388http://hdl.handle.net/11449/42526Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved.3817-3821engThin filmsDielectricsChemical synthesisX-ray diffractionArtigo10.1016/j.jallcom.2010.12.184WOS:000287968000021Acesso abertoWOS000287968000021.pdf3573363486614904