Tabata, A.Teles, L. K.Scolfaro, LMRLeite, JRKharchenko, A.Frey, T.As, D. J.Schikora, D.Lischka, K.Furthmuller, J.Bechstedt, F.2014-05-202014-05-202002-02-04Applied Physics Letters. Melville: Amer Inst Physics, v. 80, n. 5, p. 769-771, 2002.0003-6951http://hdl.handle.net/11449/40011Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.769-771engArtigo10.1063/1.1436270WOS:000173617700022Acesso restritoWOS000173617700022.pdf