Simões, A. Z. [UNESP]Ramírez, M. A. [UNESP]Stojanović, B. D. [UNESP]Marinković, Z.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-272014-05-272006-12-01Materials Science Forum, v. 514-516, n. PART 1, p. 212-215, 2006.0255-5476http://hdl.handle.net/11449/130516The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75 Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films. © 2006 Trans Tech Publications, Switzerland.212-215engBismuth titanateDielectric propertiesFerroelectric propertiesThin filmsPolymeric precursorsAtomic force microscopyBismuth compoundsLeakage currentsMicrostructureSurface morphologyFerroelectric materialsFerroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor methodArtigo10.4028/www.scientific.net/MSF.514-516.212WOS:000238056400044Acesso restrito2-s2.0-37849032028