Noriega, O. C.Tabata, A.Soares, JANTRodrigues, SCPLeite, JRRibeiro, E.Fernandez, JRLMeneses, E. A.Cerdeira, F.As, D. J.Schikora, D.Lischka, K.2014-05-202014-05-202003-05-01Journal of Crystal Growth. Amsterdam: Elsevier B.V., v. 252, n. 1-3, p. 208-212, 2003.0022-0248http://hdl.handle.net/11449/37010The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.208-212engphotoluminescencephotoreflectancemolecular beam epitaxyGaNArtigo10.1016/S0022-0248(02)02517-4WOS:000182145400031Acesso restrito