Zanetti, S. M.Bueno, Paulo Roberto [UNESP]Leite, E.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202001-03-15Journal of Applied Physics. Melville: Amer Inst Physics, v. 89, n. 6, p. 3416-3419, 2001.0021-8979http://hdl.handle.net/11449/31264Ferroelectric SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si were successfully synthesized by the modified polymeric precursor method. The films were deposited by spin coating and crystallized by rapid thermal annealing in a halogen lamp furnace, followed by postannealing at temperatures ranging from 700 degreesC to 800 degreesC in an oxygen atmosphere. Microstructural and phase evaluations were followed by x-ray diffraction and atomic force microscopy. The films displayed spherical grain structures with a superficial roughness of approximately 3-6 nm. The dielectric constant values were 121 and 248 for films treated at 700 degreesC and 800 degreesC, respectively. The P-E curve showed a voltage shift toward the positive side, which was attributed to crystallization under the halogen illumination. The remanent polarization (2P(r)) and coercive field (E-c) were 7.1 muC/cm(2) and 113 kV/cm, and 18.8 muC/cm(2) and 93 kV/cm for the films treated at 700 degreesC and 800 degreesC, respectively. (C) 2001 American Institute of Physics.3416-3419engArtigo10.1063/1.1345850WOS:000167248100054Acesso abertoWOS000167248100054.pdf04770459067332540000-0003-2827-0208