Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphere

Shimamura, K.Baldochi, S. L.Ranieri, I. M.Sato, H.Fujita, T.Mazzocchi, V. L.Parente, CBRPaiva-Santos, C. O.Santilli, Celso Valentim [UNESP]Sarukura, N.Fukuda, T.2014-05-202014-05-202001-03-01Journal of Crystal Growth. Amsterdam: Elsevier B.V., v. 223, n. 3, p. 383-388, 2001.0022-0248http://hdl.handle.net/11449/33281Ce-doped and undoped LiCaAlF6 (LiCAF) single crystals 50 mm in diameter were grown by the Czochralski technique. The formation of inclusions and cracks accompanying the crystal growth was investigated. The dependence of lattice parameters on the temperature was measured for LiCAF and LiSrAlF6 single crystals. Linear thermal expansion coefficients for both these crystals were evaluated. Higher transmission properties for LiCAF single crystals were achieved in the UV and VUV wavelength regions. (C) 2001 Elsevier B.V. B.V. All rights reserved.383-388enggrowth from meltCzochralski methodhalidesCrystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphereArtigo10.1016/S0022-0248(01)00593-0WOS:000167487400010Acesso restrito55842986818708650000-0002-8356-8093