Martins, E. [UNESP]Gomes, M. V G [UNESP]Bastida, E. M. [UNESP]Swart, J. W. [UNESP]2014-05-272014-05-271999-12-01SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings, v. 1, p. 267-270.http://hdl.handle.net/11449/65955The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.267-270engFront end receiversGilbert cell mixersLow noise amplifiersPseudomorphic high electron mobility transistorsAmplifiers (electronic)Buffer circuitsComputer simulationElectric network topologyHigh electron mobility transistorsMixer circuitsMonolithic microwave integrated circuitsSemiconducting gallium arsenideSignal receiversIntegrated circuit layoutTrabalho apresentado em evento10.1109/IMOC.1999.867106Acesso aberto2-s2.0-0033295721