Araújo, E. B. [UNESP]Lima, E. C. [UNESP]Bdikin, I. K.Kholkin, A. L.2014-05-272014-05-272012-10-31Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012.1099-4734http://hdl.handle.net/11449/73689Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the filmsubstrate interface are not primarily responsible for the observed self-polarization effect in our films. © 2012 IEEE.engpiezoresponsePZT thin filmsself-polarizationChemical methodDielectric and piezoelectric propertiesFilm-substrate interfacesLead zirconate titanateMechanical couplingNano scalePerovskite phasePerovskite phasisPiezoelectric propertyPiezoresponsePolycrystallinePt(111)PyrochloresPZTPZT filmPZT thin filmSchottky barriersThickness dependenceFerroelectric ceramicsLeadNanotechnologyPerovskitePlatinumPolarizationPolymeric filmsSchottky barrier diodesSemiconducting lead compoundsSubstratesThin filmsZirconiumInterfaces (materials)Trabalho apresentado em evento10.1109/ISAF.2012.6297844WOS:000313016400125Acesso aberto2-s2.0-848679079296725982228402054