Foschini, C. R.Joshi, P. C.Varela, José Arana [UNESP]Desu, S. B.2014-05-272014-05-271999-05-01Journal of Materials Research, v. 14, n. 5, p. 1860-1864, 1999.0884-2914http://hdl.handle.net/11449/65769We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.1860-1864engAnnealingBarium compoundsCapacitorsCrystal structureCrystallizationDepositionDynamic random access storageInsulating materialsLeakage currentsPermittivityPhase transitionsThin filmsChemical solution depositionOrthorhombic phaseDielectric filmsArtigo10.1557/JMR.1999.0250WOS:000082550500026Acesso aberto2-s2.0-00326747362-s2.0-0032674736.pdf19223571848427670000-0003-1300-4978