Melo, M. [UNESP]Araujo, E. B. [UNESP]Turygin, A. P.Shur, V. Ya.Kholkin, A. L.2018-11-262018-11-262016-01-01Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 496, n. 1, p. 177-186, 2016.0015-0193http://hdl.handle.net/11449/161437Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical method to study their physical properties. Refinements of the structure confirm the stoichiometry of the studied films. The relaxor behavior is evidenced by the dielectric measurements and Vogel-Fulcher analysis of the dielectric curves. Lowering the transition temperature (T-m) by about 100K and asymmetries in the local hysteresis loops well above T-m are discussed in terms of the existence of complex defects in thin films.177-186engRelaxorhysteresis loopdielectric measurementSBNArtigo10.1080/00150193.2016.1155035WOS:000374630800020Acesso abertoWOS000374630800020.pdf