Balzar, D.Ramakrishnan, P. A.Spagnol, P.Mani, S.Hermann, A. M.Matin, M. A.2014-05-202014-05-202002-11-01Japanese Journal of Applied Physics Part 1-regular Papers Brief Communications & Review Papers. Tokyo: Japan Soc Applied Physics, v. 41, n. 11B, p. 6628-6632, 2002.0021-4922http://hdl.handle.net/11449/31874Pristine, W and Mn 1% doped Ba(0.6)Sr(0.4)TiO(3) epitaxial thin films grown on the LaAlO(3) substrate were deposited by pulsed laser deposition (PLD). Dielectric and ferroelectric properties were determined by the capacitance measurements and X-ray diffraction was used to determine both residual elastic strains and defect-related inhomogeneous strains-by analyzing diffraction line shifts and line broadening, respectively. We found that both elastic and inhomogeneous strains are affected by doping. This strain correlates with the change in Curie-Weiss temperature and can qualitatively explain changes in dielectric loss. To explain the experimental findings, we model the dielectric and ferroelectric properties of interest in the framework of the Landau-Ginzburg-Devonshire thermodynamic theory. As expected, an, elastic-strain contribution due to the epilayer-substrate misfit has an important influence on the free-energy. However, additional terms that correspond to the defect-related inhomogeneous strain had to be introduced to fully explain the measurements.6628-6632engferroelectric thin filmsstraindefectsCurie-Weiss temperaturebarium-strontium titanateArtigo10.1143/JJAP.41.6628WOS:000182730300004Acesso restrito