Mori, C. A. B.Agopian, P. G. D. [UNESP]Martino, J. A.IEEE2020-12-102020-12-102019-01-012019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, 3 p., 2019.2330-5738http://hdl.handle.net/11449/195645In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.3engTunnel Field Effect Transistor (TFET)Silicon-On-Insulator (SOI)Ultra-Thin Body and Buried oxide (UTBB)Trabalho apresentado em eventoWOS:000565067300054