Simões, Alexandre Zirpoli [UNESP]Aguiar, E. C. [UNESP]Gonzalez, A. H. M. [UNESP]Andres, J.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202008-11-15Journal of Applied Physics. Melville: Amer Inst Physics, v. 104, n. 10, p. 6, 2008.0021-8979http://hdl.handle.net/11449/42399Pure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.6engannealingantiferromagnetic materialsatomic force microscopybismuth compoundsdielectric polarisationferroelectric switchingferroelectric thin filmslanthanum compoundsleakage currentsmultiferroicspiezoelectricityplatinumRaman spectrascanning electron microscopysiliconsilicon compoundstitaniumX-ray diffractionArtigo10.1063/1.3029658WOS:000262605800118Acesso abertoWOS000262605800118.pdf