Simões, Alexandre Zirpoli [UNESP]Ramirez, M. A. [UNESP]Riccardi, C. S. [UNESP]Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202008-12-01Solid State Sciences. Amsterdam: Elsevier B.V., v. 10, n. 12, p. 1951-1957, 2008.1293-2558http://hdl.handle.net/11449/9414Strontium bismuth titanate (SrBi4Ti4O15) thin films were deposited on (111) Pt/Ti/SiO2/Si Substrates by spin coating from the polymeric precursor method. Annealing in static air and dynamic oxygen atmosphere was performed at 700 degrees C for 2 h. The films were characterized by X-ray diffraction, atomic force microscopy and electric properties. The dielectric properties of SrBi4Ti4O15 films were found to be remarkably sensitive to the annealing atmosphere. The C-V characteristics of the metal-ferroelectric metal structure showed a typical butterfly loop that confirms the ferroelectric properties of the film related to the domains switching. SrBi4Ti4O15 thin films annealed in oxygen atmosphere showed lower ferroelectric behavior indicating a weak ferroelectricity along c-axis direction. Published by Elsevier Masson SAS.1951-1957engThin filmsAtomic force microscopyDielectric propertiesArtigo10.1016/j.solidstatesciences.2008.03.027WOS:000262236800044Acesso restrito3573363486614904