Bueno, Paulo Roberto [UNESP]Cassia-Santos, M. R.Simoes, LGPGomes, J. W.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202002-01-01Journal of the American Ceramic Society. Westerville: Amer Ceramic Soc, v. 85, n. 1, p. 282-284, 2002.0002-7820http://hdl.handle.net/11449/31321A description is given of the nonohmic behavior obtained in (SnxTi1-x)O-2-based systems. A matrix founded on (SnxTi1-x)O-2-based systems doped with Nb2O5 leads to a low-voltage varistor system with nonlinear coefficient values of similar to9. The presence of the back-to-back Schottky-type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (SnxTi1-x)O(2)(.)based system presents higher nonlinear coefficient values (>30) than does the SnO2-based varistor system.282-284engArtigo10.1111/j.1151-2916.2002.tb00084.xWOS:000173250800057Acesso restrito04770459067332540000-0003-2827-0208