Silva, V. C.P.Martino, J. A.Agopian, P. G.D. [UNESP]2019-10-062019-10-062018-10-2633rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.http://hdl.handle.net/11449/187114In this paper, the influence of interface charges (fixed charges and interface traps) on the subthreshold region was analyzed focusing on the fin height. This influence was analyzed from Triple gate SOI FinFETs (devices with a high silicon height-hfin) to Ω-Gate Nanowires (with a small hfin). The results shows that as the fin height becomes smaller, the influence of interface charges is reduced due to the better electrostatic coupling. When the fin height becomes small enough, the interface charges did not influence both subthreshold swing and threshold voltage, even for wide devices, thanks to the supercoupling.engTrabalho apresentado em evento10.1109/SBMicro.2018.8511570Acesso restrito2-s2.0-8505739034104969095954656960000-0002-0886-7798