Nogueira, Gabriel L.Vieira, Douglas H.Morais, Rogerio M.Serbena, Jose P. M.Seidel, Keli F.Alves, Neri2022-04-292022-04-292021-01-01IEEE Electron Device Letters.1558-05630741-3106http://hdl.handle.net/11449/231538Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.engField-effect transistorSchottky diodeSpray-coatingVertical electrolyte-gated transistorArtigo10.1109/LED.2021.31209282-s2.0-85117765402