Simões, Alexandre Zirpoli [UNESP]Pianno, R. F. [UNESP]Riccardi, C. S. [UNESP]Cavalcante, L. S.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202008-04-24Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 454, n. 1-2, p. 66-71, 2008.0925-8388http://hdl.handle.net/11449/42256We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.66-71engthin filmschemical synthesisdielectric responsedisordered structureArtigo10.1016/j.jallcom.2006.12.066WOS:000255215000015Acesso restrito3573363486614904