Souza, I. A.Simoes, A. Z.Cava, S.Cavalcante, L. S.Cilense, M.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202006-10-01Journal of Solid State Chemistry. San Diego: Academic Press Inc. Elsevier B.V., v. 179, n. 10, p. 2972-2976, 2006.0022-4596http://hdl.handle.net/11449/25404Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from C-V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed remnant polarization of 14 mu C/cm(2) and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to 1.5 x 10(-7) A/cm(2). This work clearly reveals the highly promising potential of BST:Sn for application in memory devices. (c) 2006 Elsevier B.V. All rights reserved.2972-2976engcrystallizationfilm depositionspace charge effectsthin filmsArtigo10.1016/j.jssc.2006.06.023WOS:000240638100002Acesso restrito9128353103083394