Simon, R. A.Kamimura, H.Berengue, O. M. [UNESP]Leite, E. R.Chiquito, A. J.2014-12-032014-12-032013-12-28Journal Of Applied Physics. Melville: Amer Inst Physics, v. 114, n. 24, 6 p., 2013.0021-8979http://hdl.handle.net/11449/113564It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the electronic potential at surfaces and, consequently, can drastically affect the electronic transport features of a practical device such as a field effect transistor. In this work experimental and theoretical approaches to characterize Al/germanium nanowire Schottky devices by using samples covered with a thin oxide layer (2nm width) were explored. It was also demonstrated that the oxide layer on Ge causes a weak dependence of the metal work function on Schottky barrier heights indicating the presence of Fermi level pinning. From theoretical calculations the pinning factor S was estimated to range between 0.52 and 0.89, indicating a weak Fermi level pinning which is induced by the presence of charge localization at all nanowires' surface coming from interface states. (C) 2013 AIP Publishing LLC.6engArtigo10.1063/1.4857035WOS:000329173200032Acesso abertoWOS000329173200032.pdf1312983845888585