Boselli, M. A.Lima, ICDGhazali, A.2014-05-202014-05-202004-05-01Journal of Magnetism and Magnetic Materials. Amsterdam: Elsevier B.V., v. 272, p. 351-352, 2004.0304-8853http://hdl.handle.net/11449/39325The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, establishing a self-consistency between the magnetic order and the electronic structure. The Curie-Weiss temperatures calculated for these low-dimensional systems are in the range of 50-80 K, and the dependence of the transition temperature with the GaAs separation layer is established. (C) 2003 Published by Elsevier B.V.351-352engdiluted magnetic semiconductor(Ga,Mn)AsspintronicsArtigo10.1016/j.jmmm.2003.11.383WOS:000222236500155Acesso restrito