Tabata, A. [UNESP]Silveira, E.Leite, J. R.Trentin, R.Scolfaro, L. M. R.Lemos, V.Frey, T.As, D. J.Schikora, D.Lischka, K.2014-05-272014-05-271999-11-01Physica Status Solidi (B) Basic Research, v. 216, n. 1, p. 769-774, 1999.0370-1972http://hdl.handle.net/11449/65869We report on first-order micro-Raman and resonant micro-Raman scattering measurements on c-InxGa1-xN (0 ≤ x ≤ 0.31) epitaxial layers. We have found that both, the transverse-optical (TO) and longitudinal-optical (LO) phonons of InxGa1-xN alloy exhibit a one-mode-type behavior. Their frequencies at Γ lie on straight lines connecting the corresponding values obtained for the c-GaN and c-InN binary compounds. Evidence for phase separation is shown in the sample with the alloy composition x = 0.31. The Raman spectra, with excitation energy close to 2.4 eV, show an enhanced additional peak, with frequency between the values found for the LO and TO phonon modes of the C-In0.31Ga0.69N epitaxial layer. We ascribed this peak to the LO phonon mode of a minority phase with In content of ≈0.80.769-774engArtigo10.1002/(SICI)1521-3951(199911)216:1<769::AID-PSSB769>3.0.CO;2-LWOS:000084193900146Acesso restrito2-s2.0-0033243031