Souza, I. A.Simoes, A. Z.Longo, Elson [UNESP]Varela, José Arana [UNESP]Pizani, P. S.2014-05-202014-05-202006-05-22Applied Physics Letters. Melville: Amer Inst Physics, v. 88, n. 21, 3 p., 2006.0003-6951http://hdl.handle.net/11449/32893Photoluminescence (PL) properties at room temperature of disordered Ba0.50Sr0.50(Ti0.80Sn0.20)O-3 (BST:Sn) thin films were obtained by the polymeric precursor method. X-ray diffraction data and corresponding PL properties have been measured using the 488 nm line of an argon ion laser. The PL spectra of the film annealed at 350 degrees C for 21 h are stronger than those of the film annealed at 350 degrees C for 28 h, indicating a disorganized structure. The energy band gaps of the crystalline and amorphous BST:Sn thin films were 3.35 and 2.25 eV, respectively. The doped BST thin films also tend to a cubic structure, resulting from TiO6 deformations. (c) 2006 American Institute of Physics.3engArtigo10.1063/1.2206993WOS:000237846800029Acesso abertoWOS000237846800029.pdf