Boratto, Miguel HenriqueScalvi, Luis Vicente de Andrade [UNESP]Machado, Diego Henrique O.2016-03-022016-03-022014Advanced Materials Research, v. 975, p. 248-253, 2014.1662-8985http://hdl.handle.net/11449/135610Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.248-253engAluminaOxidationResistive evaporationThermal annealingArtigo10.4028/www.scientific.net/AMR.975.248Acesso restrito77307194764512320000-0001-5762-6424