Caparroz, L. F. V.Bordallo, C. C. M.Martino, J. A.Simoen, E.Claeys, C.Agopian, P. G. D. [UNESP]Sarafis, P.Nassiopoulou, A. G.2018-11-262018-11-262017-01-012017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 61-63, 2017.2330-5738http://hdl.handle.net/11449/160097This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, focusing on the threshold voltage (V-TH), subthreshold swing (SS), the Early voltage V-EA and the intrinsic gain voltage (A(V)). The effects of strain techniques are also studied. The p-channel devices showed a greater immunity to radiation when looking at their digital parameters while nFinFETs had a better response to proton radiation from an analog parameters point of view.61-63engFinFETlow temperatureproton radiationstrained devicesTrabalho apresentado em eventoWOS:000425210900017Acesso aberto04969095954656960000-0002-0886-7798