Messaddeq, S. H.Li, M. S.Lezal, D.Messaddeq, Younes [UNESP]Ribeiro, SJLOliveira, LFCRollo, JMDA2014-05-202014-05-202001-06-01Journal of Optoelectronics and Advanced Materials. Bucharest-magurele: Natl Inst Optoelectronics, v. 3, n. 2, p. 295-302, 2001.1454-4164http://hdl.handle.net/11449/33295The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga10Ge25S65 glasses has been studied through their effects on the structure and optical properties. To evaluate the photostructural change infrared and Raman spectra for bulk Ga10Ge25S65 glasses have been measured before and after exposure. The Raman spectra are interpreted in terms of models in which the Ge atoms are fourfold coordinated and the S atoms are two fold coordinated. The observed changes in the spectral region of (S-S) stretching vibration (470-490 cm (-1)) is a direct evidence for the occurrence of important structural changes in local bonding configuration caused by optical irradiation. It is shown that the dominant photostrucural changes are chain formation tendency of the chalcogenide atoms under the laser irradiation rather than rings.295-302engchalcogenidephotoexpansionRaman spectraGaGeS bulk glassArtigoWOS:000169586800015Acesso aberto29985038419178156446047463034654