Simoes, A. Z.Cavalcante, L. S.Longo, Elson [UNESP]Varela, José Arana [UNESP]Riccardi, C. S.Mizaikoff, B.2014-05-202014-05-202007-02-19Applied Physics Letters. Melville: Amer Inst Physics, v. 90, n. 8, 3 p., 2007.0003-6951http://hdl.handle.net/11449/32327The authors investigated the influence of defects on the piezoelectric and dielectric properties of Bi4Ti3O12 (BIT), SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi144) thin films by x-ray photoemission spectroscopy measurements. In the SBTi film, Sr which is a nonpolarizable ion restricting the movement of Ti4+ ions and thus leads to a low piezoresponse. Meanwhile, the oxygen environment is quite different in the BIT and CBTi144 films exhibiting excellent piezoelectric properties. The piezoelectric coefficient and the dielectric behavior were larger for a-b axis oriented than for c axis-oriented films due to the defects created during the films crystallization. (c) 2007 American Institute of Physics.3engArtigo10.1063/1.2472527WOS:000244420600065Acesso abertoWOS000244420600065.pdf