Ramajo, L.Parra, R.Ramirez, M. A. [UNESP]Castro, M. S.2014-05-202014-05-202011-10-01Bulletin of Materials Science. Bangalore: Indian Acad Sciences, v. 34, n. 6, p. 1213-1217, 2011.0250-4707http://hdl.handle.net/11449/42426Microstructure, electrical properties and dielectric behaviour of K1/2Na1/2NbO3 (KNN) and CaTiO3-modified K1/2Na1/2NbO3 (CTO-KNN) systems, were investigated. Discs doped with 0 to 0-55% mol of CaTiO3 (CTO) were sintered at 1125 degrees C for 2 h. Although minority phases were found in doped samples, CaTiO3 was not detected. It was also observed that CTO changed the microstructure and grain size of KNN drastically. Also, the Curie temperature and permittivity values decreased. Addition of CTO between 0.15 and 0.45 mol% decreases the density and dielectric values. Samples prepared with higher content of CTO than 0.45 mol% showed better electrical properties.1213-1217engNa0.5K0.5NbO3CaTiO3lead-free ceramicselectrical propertiesElectrical and microstructural properties of CaTiO3-doped K1/2Na1/2NbO3-lead free ceramicsArtigo10.1007/s12034-011-0241-yWOS:000298618700009Acesso restritoWOS000298618700009.pdf