Simoes, A. Z.Ramirez, M. A.Riccardi, C. S.Gonzalez, AHMLongo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202006-08-01Materials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 98, n. 2-3, p. 203-206, 2006.0254-0584http://hdl.handle.net/11449/38329We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.203-206engthin filmsannealingelectrical propertiesArtigo10.1016/j.matchemphys.2005.09.004WOS:000238298100004Acesso restrito