Cavalcante, L. S.Simoes, A. Z.Santos, L. P. S.Santos, M. R. M. C.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202006-12-01Journal of Solid State Chemistry. San Diego: Academic Press Inc. Elsevier B.V., v. 179, n. 12, p. 3739-3743, 2006.0022-4596http://hdl.handle.net/11449/25370Ca(Zr0.05Ti0.95)O-3 (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of 2.5 mu C/cm(2), and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about 4.6 x 10(-8) A/cm(2) at 3 V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields. (c) 2006 Elsevier B.V. All rights reserved.3739-3743engdielectric propertiesthin filmschemical solution depositionCZTArtigo10.1016/j.jssc.2006.08.006WOS:000242787500019Acesso restrito