Simoes, A. Z.Ramirez, M. A.Stojanovic, B. D.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-202014-05-202006-10-15Applied Surface Science. Amsterdam: Elsevier B.V., v. 252, n. 24, p. 8471-8475, 2006.0169-4332http://hdl.handle.net/11449/36265Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.8471-8475engthin filmsatomic force microscopydielectric propertiesfatigueArtigo10.1016/j.apsusc.2005.11.055WOS:000241888000016Acesso restrito