Lopes, E. M. [UNESP]César, D. F.Franchello, F.Duarte, J. L.Dias, I. F LLaureto, E.Elias, D. C.Pereira, M. V MGuimarães, P. S SQuivy, A. A.2014-05-272014-05-272013-07-31Journal of Luminescence, v. 144, p. 98-104.0022-2313http://hdl.handle.net/11449/76084This paper discusses the theoretical and experimental results obtained for the excitonic binding energy (Eb) in a set of single and coupled double quantum wells (SQWs and CDQWs) of GaAs/AlGaAs with different Al concentrations (Al%) and inter-well barrier thicknesses. To obtain the theoretical Eb the method proposed by Mathieu, Lefebvre and Christol (MLC) was used, which is based on the idea of fractional-dimension space, together with the approach proposed by Zhao et al., which extends the MLC method for application in CDQWs. Through magnetophotoluminescence (MPL) measurements performed at 4 K with magnetic fields ranging from 0 T to 12 T, the diamagnetic shift curves were plotted and adjusted using two expressions: one appropriate to fit the curve in the range of low intensity fields and another for the range of high intensity fields, providing the experimental Eb values. The effects of increasing the Al% and the inter-well barrier thickness on E b are discussed. The Eb reduction when going from the SQW to the CDQW with 5 Å inter-well barrier is clearly observed experimentally for 35% Al concentration and this trend can be noticed even for concentrations as low as 25% and 15%, although the Eb variations in these latter cases are within the error bars. As the Zhao's approach is unable to describe this effect, the wave functions and the probability densities for electrons and holes were calculated, allowing us to explain this effect as being due to a decrease in the spatial superposition of the wave functions caused by the thin inter-well barrier. © 2013 Elsevier B.V.98-104engCoupled double quantum wellsExcitonic binding energyGaAs/AlGaAsMagnetophotoluminescenceDouble quantum wellElectrons and holesExcitonic bindingHigh-intensity fieldsProbability densitiesTheoretical and experimentalAluminumBinding energyWave functionsSemiconductor quantum wellsArtigo10.1016/j.jlumin.2013.06.037WOS:000325600100019Acesso restrito2-s2.0-84880668366