Oliveira, Alberto Vinicius deSimoen, EddyAgopian, Paula Ghedini Der [UNESP]Martino, Joao AntonioMitard, JeromeWitters, LiesbethCollaert, NadineThean, AaronClaeys, CorIEEE2018-11-262018-11-262016-01-012016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2016.http://hdl.handle.net/11449/159327One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 cm(2)/Vs at 77 K is reported for both STI processes, as a result of the compressive strain in the channel. Regarding the OFF-state region, it is found that the substrate current plays an important role at room temperature and for long channels. It decreases up to three orders of magnitude from room temperature down to 200 K, as long as the p-n junction reverse current from the drain to bulk dominates the substrate current.3engGe pFinFETlong strained devicelow temperature operationSTI firstSTI lastImpact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processesTrabalho apresentado em eventoWOS:000392693000014Acesso aberto04969095954656960000-0002-0886-7798