Moura, F. [UNESP]Simões, Alexandre Zirpoli [UNESP]Cavalcante, L. S.Zaghete, M. A. [UNESP]Varela, José Arana [UNESP]Longo, Elson [UNESP]2014-05-202014-05-202008-10-20Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 466, n. 1-2, p. L15-L18, 2008.0925-8388http://hdl.handle.net/11449/25520Ba(Zr0.10Ti0.90)O-3 (BZT) and V substituted BZT ceramics (BZT:V) were prepared by mixed oxide method and polymeric precursor method. The effect of V5+ addition in the BZT lattice was evaluated by X-ray diffraction (XRD) and Fourier transform Raman (FT-Raman) spectroscopy. When vanadium is introduced in the BZT lattice there is a decrease in the grain size. Substitution of vanadium on B-site broads the dielectric permittivity curve. That can be caused by repulsion of vanadium with their next nearest neighbors leading to a structure which is tetragonally distorted. (C) 2007 Elsevier B.V. All rights reserved.L15-L18engCeramicsFerroelectricsSolid-state reactionsChemical synthesisVacancy informationFerroelectric and dielectric properties of vanadium-doped Ba(Ti0.90Zr0.10)O-3 ceramicsArtigo10.1016/j.jallcom.2007.11.057WOS:000260483400004Acesso restrito