Boratto, Miguel H. [UNESP]Ramos, Roberto A. [UNESP]Congiu, Mirko [UNESP]Graeff, Carlos F.O. [UNESP]Scalvi, Luis V.A. [UNESP]2018-12-112018-12-112017-07-15Applied Surface Science, v. 410, p. 278-281.0169-4332http://hdl.handle.net/11449/178729A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol–gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 × 102 in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 102 under applied square wave voltage.278-281engMemristorNon-volatile memoryRRAMSnO2/TiO2Sol–gelThin filmArtigo10.1016/j.apsusc.2017.03.132Acesso aberto2-s2.0-850158733212-s2.0-85015873321.pdf