Zanetti, S. M.Duclere, J. R.Guilloux-Viry, M.Bouquet, V.Leite, E. R.Longo, Elson [UNESP]Varela, José Arana [UNESP]Perrin, A.2014-05-272014-05-272001-10-01Journal of the European Ceramic Society, v. 21, n. 12, p. 2199-2205, 2001.0955-2219http://hdl.handle.net/11449/66587Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si(100) using a sequential deposition process from two SBN and Bi2O3 targets. This route allows for bismuth enrichment of the film composition in order to improve the ferroelectric characteristics. Structural and microstructural characterizations were performed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition of films and targets was determined by energy dispersive X-ray spectrometry (EDX). The deposition temperature, which provided well-crystallized layered perovskite SBN phase films in situ, was found to be 700°C. The results were compared with those obtained for SBN films deposited at 400°C and then crystallized ex situ. For an ex situ annealing temperature of 750°C, a remanent polarization value (Pr) of 23.2 μc/cm2 and a coercive field (Ec) of 112 kV/cm were measured. © 2001 Elsevier Science Ltd. All rights reserved.2199-2205engFerroelectric propertiesFilmsPLDPulsed laser depositionSrBi2Nb2O9DepositionFerroelectric ceramicsPerovskiteScanning electron microscopyX ray diffraction analysisX ray spectroscopyPolarization value (Pr)Thin filmsfilmArtigo10.1016/S0955-2219(00)00304-6Acesso restrito2-s2.0-0035479512