de Menezes, Alan S.dos Santos, Adenilson O.Almeida, Juliana M. A.Bortoleto, Jose R. R. [UNESP]Cotta, Monica A.Morelhao, Sergio L.Cardoso, Lisandro P.2014-05-202014-05-202010-08-01Crystal Growth & Design. Washington: Amer Chemical Soc, v. 10, n. 8, p. 3436-3441, 2010.1528-7483http://hdl.handle.net/11449/223This paper reports a direct observation of an interesting split of the (022)(022) four-beam secondary peak into two (022) and (022) three-beam peaks, in a synchrotron radiation Renninger scan (phi-scan), as an evidence of the layer tetragonal distortion in two InGaP/GaAs (001) epitaxial structures with different thicknesses. The thickness, composition, (a perpendicular to) perpendicular lattice parameter, and (01) in-plane lattice parameter of the two epitaxial ternary layers were obtained from rocking curves (omega-scan) as well as from the simulation of the (022)(022) split, and then, it allowed for the determination of the perpendicular and parallel (in-plane) strains. Furthermore, (022)(022) omega:phi mappings were measured in order to exhibit the multiple diffraction condition of this four-beam case with their split measurement.3436-3441engArtigo10.1021/cg100146xWOS:000280471700024Acesso restrito