Mori, C. A.B.Agopian, P. O.D. [UNESP]Martino, J. A.2018-12-112018-12-112018-01-01ECS Transactions, v. 85, n. 8, p. 73-78, 2018.1938-58621938-6737http://hdl.handle.net/11449/171228This paper presents an improvement on the use of the transistor efficiency to verify the presence of self-heating effects using only DC measurements. Applying this improved method on FinFET devices allowed the establishment of a comparison of the self-heating effect among devices with different channel lengths, despite their different channel length modulation effects.73-78engTrabalho apresentado em evento10.1149/08508.0073ecstAcesso aberto2-s2.0-850501535712-s2.0-85050153571.pdf