Double gate tunnel-FET working like a permittivity based biosensor with different drain to gate and drain to biomaterial alignments

Macambira, C. N.Agopian, P. G.D. [UNESP]Martino, J. A.2019-10-062019-10-062019-01-01ECS Journal of Solid State Science and Technology, v. 8, n. 3, p. Q50-Q53, 2019.2162-87772162-8769http://hdl.handle.net/11449/188062The goal of this work is to analyze the effect of the drain to gate and to biomaterial alignments on n-type Tunnel-FET (nTFET) working like a permittivity based biosensor. The biomaterial over the drain and channel region influence through the different dielectric permittivity material (k, where ε = k∗ε0) in the sensing area. The results show that the use of Tunnel-FET ambipolar current presents high sensitivity for using it as biosensor devices (Bio-TFET) for transistors with the drain to gate underlap (LUD) of 27 nm and with minimum drain to biomaterial overlap (Lover = 0) region.Q50-Q53engDouble gate tunnel-FET working like a permittivity based biosensor with different drain to gate and drain to biomaterial alignmentsArtigo10.1149/2.0151903jssAcesso aberto2-s2.0-8507202838004969095954656960000-0002-0886-7798