Simões, Alexandre Zirpoli [UNESP]Ramirez, M. A. [UNESP]Foschini, C. R. [UNESP]Moura, F.Varela, José Arana [UNESP]Longo, Elson [UNESP]2014-05-202014-05-202012-07-01Ceramics International. Oxford: Elsevier B.V., v. 38, n. 5, p. 3841-3849, 2012.0272-8842http://hdl.handle.net/11449/9419Bi0.85La0.15FeO3 (BLFO015) thin films were deposited by the polymeric precursor solution on La0.5Sr0.5CoO3 substrates. For comparison, the films were also deposited on Pt bottom electrode. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all secondary phases under a substitution ratio x = 15% at a temperature of 500 degrees C for 2 h. A substantial increase in the remnant polarization (P-r) with La0.5Sr0.5CoO3 bottom electrode (P-r approximate to 34 mu C/cm(2)) after a drive voltage of 9 V was observed when compared with the same film deposited on Pt substrate. The leakage current behavior at room temperature decreased from 10(-8) (Pt) to 10(-10) A/cm(2) on (La0.5Sr0.5CoO3) electrode under a voltage of 5 V. The fatigue resistance of the Au/BLFO015/LSCO/Pt/TiO2/SiO2/Si (1 0 0) capacitors with a thickness of 280 nm exhibited no degradation after 1 x 10(8) switching cycles at a frequency of 1 MHz. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.3841-3849engFilmsInterfacesDielectric propertiesFerroelectric propertiesArtigo10.1016/j.ceramint.2012.01.034WOS:000303634900043Acesso restrito357336348661490419223571848427670000-0003-1300-4978