Caracterização elétrica e microestrutural de cerâmicas varistoras de baixa tensão à base de ('SN IND.1-x''TI IND.x')'O IND.2' e 'SN''O IND.2' dopados com 'CO''O' e 'NB IND.2''O IND.5'
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Data
2007-06-29
Autores
Leite, Daniela Russo [UNESP]
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Universidade Estadual Paulista (Unesp)
Resumo
O desenvolvimento de dispositivos varistores de baixa tensão tem atraído grande interesse uma vez que os equipamentos eletrônicos modernos, de uso doméstico, necessitam de sistemas não-lineares com tensão de ruptura da ordem de 100 V/cm para proteção contra sobrecarga de tensão. Neste sentido, cerâmicas a base de (Sn1-xTix)O2 (0,5<x<10% mol) dopadas com 1% mol CoO, 0,05% mol Nb2O5 e 0,05 e 0,1% mol Cr2O3 foram preparadas pelo método de mistura de óxidos, visando sua utilização como varistores de baixa tensão, com tamanho de grãos, condutividade, coeficiente de não-linearidade () e tensão de ruptura (ER) controlados. Foram investigadas a influência dos dopantes e da temperatura de calcinação em relação á microestrutura e as propriedades elétricas destas cerâmicas. Foram utilizadas medidas de área superficial, TG, XRD e Método de Rietveld, espectroscopia eletrônica de absorção na região do UV-Vis, FEG e TEM a fim de caracterizar os pós preparados. Observou-se a formação de solução sólida entre o TiO2 e o SnO2 a partir de 1000oC. O TiO2 mostrou-se efetivo quanto ao favorecimento do crescimento dos grãos dos sistemas sinterizados. Os sistemas com maiores concentrações de TiO2 apresentaram elevada resistividade, que pode estar relacionada à baixa mobilidade eletrônica deste óxido (TiO2) quando comparada ao SnO2. Análises de EDX e a caracterização elétrica por I-V e C-V indicaram que o Ti também seja responsável pela formação da barreira de potencial na região de contorno de grãos, formando provavelmente uma segunda fase rica em Ti e Co. A adição de Cr ao sistema contendo 1% mol de TiO2 favoreceu a formação da barreira de potencial na região de contorno de grão. Os sistemas contendo menores concentrações de TiO2 (0,5 e 1,0% mol) apresentaram valores de ER de 410 e 617 V/cm, respectivamente, indicando características...
The development of low-voltage varistor devices has attracted much attention since modern electronic equipments require for non-linear systems with breakdown voltages around 100 V/cm for protection against voltage surges. Therefore, (Sn1-xTix)O2-based ceramics with 0.5<x<10% mol, doped with 1% mol CoO, 0.05% mol Nb2O5 and 0.05 and 0.1% mol Cr2O3, were prepared by mechanical mixing, aiming to the synthesis of low-voltage varistors with controlled grain size, conductivity, nonlinearity coefficient (a) and breakdown voltage (ER). The influence of the additives and of the calcination temperature on the microstructure development and on the electrical properties of these ceramics was investigated. The prepared powders were characterized by means of surface area measurements, TG, XRD and Rietveld refinement, UVVis absorption spectroscopy, FEG and TEM. The solid solution between the TiO2 and the SnO2 was observed to start around 1000oC. It was established that TiO2 enhances the grain growth and increases the resistivity of the studied compositions. The high resistivity could be related to the low electronic mobility of this oxide (TiO2) when compared to that of SnO2. The acquisition of IV and C-V curves for electrical characterization, along with EDX analysis, indicated that TiO2 is also responsible for the potential barrier formation in the grain boundary region, maybe due to the formation of a secondary phase rich in Ti and Co. The addition of Cr to the system containing 1% mol TiO2 enhanced the formation of the potential barrier in the grain boundary region. The systems with minor TiO2 concentrations (0.5 and 1.0% mol) presented ER values of 410 and 617 V/cm, respectively, displaying a varistor behavior suitable for low-voltage applications. The microstructure and electric properties of SnO2-based systems containing seed-grains of SnO2+1% mol of CoO and SnO2+1% mol of CuO,...(Complete abstract click electronic access below)
The development of low-voltage varistor devices has attracted much attention since modern electronic equipments require for non-linear systems with breakdown voltages around 100 V/cm for protection against voltage surges. Therefore, (Sn1-xTix)O2-based ceramics with 0.5<x<10% mol, doped with 1% mol CoO, 0.05% mol Nb2O5 and 0.05 and 0.1% mol Cr2O3, were prepared by mechanical mixing, aiming to the synthesis of low-voltage varistors with controlled grain size, conductivity, nonlinearity coefficient (a) and breakdown voltage (ER). The influence of the additives and of the calcination temperature on the microstructure development and on the electrical properties of these ceramics was investigated. The prepared powders were characterized by means of surface area measurements, TG, XRD and Rietveld refinement, UVVis absorption spectroscopy, FEG and TEM. The solid solution between the TiO2 and the SnO2 was observed to start around 1000oC. It was established that TiO2 enhances the grain growth and increases the resistivity of the studied compositions. The high resistivity could be related to the low electronic mobility of this oxide (TiO2) when compared to that of SnO2. The acquisition of IV and C-V curves for electrical characterization, along with EDX analysis, indicated that TiO2 is also responsible for the potential barrier formation in the grain boundary region, maybe due to the formation of a secondary phase rich in Ti and Co. The addition of Cr to the system containing 1% mol TiO2 enhanced the formation of the potential barrier in the grain boundary region. The systems with minor TiO2 concentrations (0.5 and 1.0% mol) presented ER values of 410 and 617 V/cm, respectively, displaying a varistor behavior suitable for low-voltage applications. The microstructure and electric properties of SnO2-based systems containing seed-grains of SnO2+1% mol of CoO and SnO2+1% mol of CuO,...(Complete abstract click electronic access below)
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Palavras-chave
Cerâmica eletrônica, Materiais, Microestrutura, Varistors
Como citar
LEITE, Daniela Russo. Caracterização elétrica e microestrutural de cerâmicas varistoras de baixa tensão à base de ('SN IND.1-x''TI IND.x')'O IND.2' e 'SN''O IND.2' dopados com 'CO''O' e 'NB IND.2''O IND.5'. 2007. 107 f. Tese (doutorado) - Universidade Estadual Paulista, Instituto de Química, 2007.