Células solares de ZnO:Ga nanocristalino sensibilizado por corante
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2008-06-30
Autores
Gonçalves, Agnaldo de Souza [UNESP]
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Universidade Estadual Paulista (Unesp)
Resumo
Com o objetivo de melhorar o transporte eletrônico no eletrodo nanoestruturado de ZnO, íons Ga3+ foram utilizados neste trabalho como dopantes e/ou modificadores da superfície. Nanopartículas de ZnO e ZnO:Ga 1, 3 e 5% cristalinas foram preparadas pelo método da precipitação a baixa temperatura. Nenhuma evidência da formação de ZnGa2O4, mesmo na amostra ZnO:Ga 5%, foi detectada por DRX. Dados de XPS revelaram que Ga está presente na matriz de ZnO como Ga3+. O tamanho de partícula diminuiu com o aumento na quantidade de gálio, como observado por FE-SEM, provavelmente devido a uma velocidade de hidrólise mais rápida. O menor tamanho de partícula proporcionou filmes com maior porosidade e área superficial, possibilitando uma maior quantidade de corante adsorvida. Quando estes filmes foram aplicados em células solares, o dispositivo baseado em ZnO:Ga 5% apresentou eficiência global na conversão de energia de 6% (a 10 mW cm-2), um valor três vezes maior que o observado para as células solares de ZnO neste trabalho. Este é um dos maiores valores já relatados para células solares de ZnO. Estudos por TAS da dinâmica fotoinduzida em filmes de ZnO:Ga sensibilizados revelaram um maior rendimento do cátion do corante com o aumento na quantidade de gálio, além de uma aceleração no processo de recombinação de carga. Este estudo indica que a dopagem de ZnO com íons Ga3+ possibilita um aumento na fotocorrente e eficiência global do dispositivo. O coeficiente de difusão (D) e o tempo de vida do elétron (τ) foram estudados em células solares seladas por SLIM-PCV. Em comparação às células solares de ZnO, menores valores de D e maiores valores de τ foram observados nas células solares de ZnO:Ga. O mesmo comportamento foi também observado por EIS. Em condições de densidade eletrônica equivalente, os menores valores de Voc em células solares de ZnO:Ga comparados...
In order to enhance the electron transport properties in the ZnO nanostructured electrode, Ga3+ was used in this work as the impurity ions as either surface modifiers and/or dopants. Highly crystalline ZnO and Ga-modified zinc oxide (ZnO:Ga) nanoparticles containing 1, 3, and 5 at.% of Ga3+ were prepared by the precipitation method at low temperature. No evidence of ZnGa2O4, even in the samples containing 5 at.% of Ga3+, was detected by XRD. XPS data revealed that Ga is present into the ZnO matrix as Ga3+. The particle size decreased as the gallium concentration was raised as observed by SEM, which might be related to a faster hydrolysis reaction rate. The smaller particle size provided films with higher porosity and surface area, enabling a higher dye loading. When these films were applied to DSSCs as photoelectrodes, the device based on ZnO:Ga 5 at.% presented an overall conversion efficiency of 6% (at 10 mW cm-2), a three-fold increase compared to the ZnObased DSSCs under the same condition. This is one of the highest efficiencies reported so far for ZnO-based DSSCs. The transient absorption (TAS) study of the photoinduced dynamics of dye-sensitized ZnO:Ga films showed the higher the gallium content, the higher the amount of dye cation formed, while a faster recombination dynamics was observed. The study indicates that Ga-modification of nanocrystalline ZnO leads to an improvement of photocurrent and overall efficiency in the corresponding device. The diffusion coefficient (D) and electron lifetime (τ) were studied in sealed DSSCs by SLIM-PCV. In comparison to the DSSCs based on ZnO electrodes, the ZnO:Ga-based cells provided lower D values and higher values of τ. The result was interpreted with transport limited recombination. The same behavior was also observed by EIS. At matched electron densities, a lower open-circuit voltage (Voc) of DSSCs based on ZnO:Ga was observed... (Complete abstract click electronic access below)
In order to enhance the electron transport properties in the ZnO nanostructured electrode, Ga3+ was used in this work as the impurity ions as either surface modifiers and/or dopants. Highly crystalline ZnO and Ga-modified zinc oxide (ZnO:Ga) nanoparticles containing 1, 3, and 5 at.% of Ga3+ were prepared by the precipitation method at low temperature. No evidence of ZnGa2O4, even in the samples containing 5 at.% of Ga3+, was detected by XRD. XPS data revealed that Ga is present into the ZnO matrix as Ga3+. The particle size decreased as the gallium concentration was raised as observed by SEM, which might be related to a faster hydrolysis reaction rate. The smaller particle size provided films with higher porosity and surface area, enabling a higher dye loading. When these films were applied to DSSCs as photoelectrodes, the device based on ZnO:Ga 5 at.% presented an overall conversion efficiency of 6% (at 10 mW cm-2), a three-fold increase compared to the ZnObased DSSCs under the same condition. This is one of the highest efficiencies reported so far for ZnO-based DSSCs. The transient absorption (TAS) study of the photoinduced dynamics of dye-sensitized ZnO:Ga films showed the higher the gallium content, the higher the amount of dye cation formed, while a faster recombination dynamics was observed. The study indicates that Ga-modification of nanocrystalline ZnO leads to an improvement of photocurrent and overall efficiency in the corresponding device. The diffusion coefficient (D) and electron lifetime (τ) were studied in sealed DSSCs by SLIM-PCV. In comparison to the DSSCs based on ZnO electrodes, the ZnO:Ga-based cells provided lower D values and higher values of τ. The result was interpreted with transport limited recombination. The same behavior was also observed by EIS. At matched electron densities, a lower open-circuit voltage (Voc) of DSSCs based on ZnO:Ga was observed... (Complete abstract click electronic access below)
Descrição
Palavras-chave
Química inorgânica, Eletroquimica, Materiais, Flexible DSCs, Grätzel solar cells
Como citar
GONÇALVES, Agnaldo de Souza. Células solares de ZnO:Ga nanocristalino sensibilizado por corante. 2008. 214 f. Tese (doutorado) - Universidade Estadual Paulista, Instituto de Química, 2008.