Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor
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Data
2014-01-01
Autores
Boratto, Miguel Henrique [UNESP]
Scalvi, Luis Vicente de Andrade [UNESP]
Machado, Diego Henrique de Oliveira [UNESP]
Título da Revista
ISSN da Revista
Título de Volume
Editor
Trans Tech Publications Ltd
Resumo
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.
Descrição
Palavras-chave
Alumina, Resistive evaporation, Thermal annealing, Oxidation
Como citar
Electroceramics Vi. Stafa-zurich: Trans Tech Publications Ltd, v. 975, p. 248-253, 2014.