Concentrações e fontes de silício foliar na produção e na qualidade do agrião e do almeirão
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Data
2018-03-16
Autores
Garcia Neto, Júlio
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Editor
Universidade Estadual Paulista (Unesp)
Resumo
A pulverização foliar de silício (Si) pode beneficiar a produção e a qualidade das hortaliças folhosas, sendo desconhecidos esses efeitos no agrião-da-terra (Barbarea verna) e no almeirão (Cichorium intybus cv. Spadona). Objetivou-se verificar o efeito da pulverização foliar de silício em diferentes fontes e concentrações no teor foliar de Si, nas variáveis de crescimento, no teor foliar de ascorbato e na perda de água durante o armazenamento das hortaliças agrião e almeirão. Foram realizados dois experimentos, com as duas hortaliças cultivadas em vasos (4 dm3) preenchidos com areia, recebendo solução nutritiva. Durante o cultivo, a média da temperatura máxima atingiu 43,1 °C ± 10,6 °C. Utilizou-se delineamento inteiramente casualizado, em esquema fatorial 2 x 4, sendo duas fontes de silício: silicato de potássio e silicato de sódio e potássio estabilizado, e quatro concentrações de Si foliar: 0 (controle); 0,84; 1,68; 2,52 g L-1 de Si, com quatro repetições. As mudas foram transplantadas após 10 dias da emergência para vasos. Foram realizadas três aplicações foliares de Si, a cada dez dias, sendo a primeira realizada aos 28 dias após o transplantio (DAT). A pulverização foliar de silício é viável, para incrementar o acúmulo deste elemento na planta, o crescimento e a biofortificação, e diminui a perda de água da folha pós-colheita do agrião da terra e do almeirão, destacando-se a concentração de 2,52 g L-1 de Si na forma de silicato de potássio.
Silicon (Si) leaf spraying can benefit the production and quality of leafy vegetables. Such knowing is unclear to land cress (Barbarea verna) and root chicory (Cichorium intybus cv. Spadona). This study aimed was verify the effect of silicon leaf spraying under different sources and concentrations in Si leaf content, on growth variables, ascorbate leaf content, and water loss during storage of land cress and root chicory. We carried out two experiments with two vegetables grown in (4 dm3) pots filled with sand, receiving nutrient solution. During growing, the maximum temperature average was 43.1 °C ± 10.6 ºC. A completely randomized design was used in a 2 x 4 factorial scheme, with two sources of silicon: potassium silicate and stabilized sodium and potassium silicate, and four concentrations of leaf spraying Si: 0 (control), 0.84, 1.68, and 2.52 g L-1 of Si, with four replications. The seedlings were transplanted after 10 days of vessel emergence. Three Si leaf sprayings were done every ten days where the first spraying was at 28 days after transplanting (DAT). Silicon leaf spraying is feasible to increase the Si accumulation, plant growth and biofortification and decrease the post-harvest water loss of land cress and root chicory leaves. The Si concentration of 2.52 g L-1 as potassium silicate was highlighted.
Silicon (Si) leaf spraying can benefit the production and quality of leafy vegetables. Such knowing is unclear to land cress (Barbarea verna) and root chicory (Cichorium intybus cv. Spadona). This study aimed was verify the effect of silicon leaf spraying under different sources and concentrations in Si leaf content, on growth variables, ascorbate leaf content, and water loss during storage of land cress and root chicory. We carried out two experiments with two vegetables grown in (4 dm3) pots filled with sand, receiving nutrient solution. During growing, the maximum temperature average was 43.1 °C ± 10.6 ºC. A completely randomized design was used in a 2 x 4 factorial scheme, with two sources of silicon: potassium silicate and stabilized sodium and potassium silicate, and four concentrations of leaf spraying Si: 0 (control), 0.84, 1.68, and 2.52 g L-1 of Si, with four replications. The seedlings were transplanted after 10 days of vessel emergence. Three Si leaf sprayings were done every ten days where the first spraying was at 28 days after transplanting (DAT). Silicon leaf spraying is feasible to increase the Si accumulation, plant growth and biofortification and decrease the post-harvest water loss of land cress and root chicory leaves. The Si concentration of 2.52 g L-1 as potassium silicate was highlighted.
Descrição
Palavras-chave
adubação foliar, Barbarea verna, Cichorium intybus, elemento benéfico, estresse abiótico, hortaliças folhosas, silicato, Leaf fertilization, Beneficial element, Abiotic stress, Leafy vegetables