Estudo de transistores a base de óxido de zinco visando aplicações em sensor de radiação ultravioleta
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2018-03-27
Autores
Gomes, Tiago Carneiro
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Universidade Estadual Paulista (Unesp)
Resumo
Transistores de filme fino de ZnO, cujo desempenho depende das condições de preparação da camada de ZnO e do dielétrico de gate, tem sido aplicados como sensores de radiação ultravioleta (UV), visando prevenir danos à saúde da pele. Este trabalho tem como objetivo a fabricação de transistores de ZnO/Al2O3, mediante o estudo simultâneo dos parâmetros relacionados à preparação das camadas de ZnO e Al2O3, bem como, o de transistores com dielétrico padrão (ZnO/SiO2) submetidos a diferentes condições de funcionamento. Estes estudos visam encontrar quais condições viabilizam as aplicações dos transistores como sensor UV. Os experimentos englobam a deposição de filmes de ZnO tanto por sputtering de um alvo de ZnO, quanto por spray pirolise de uma solução de acetato de zinco. O dielétrico SiO2 foi obtido comercialmente, enquanto que o Al2O3 foi crescido por anodização. Os transistores foram fabricados em diversas condições, as quais foram estabelecidas pelos métodos de planejamento experimental Taguchi e Plackett-Burman. As respostas das caracterizações foram interpretadas por técnicas de estatística (ANOVA). Os resultados demonstram que Al2O3 otimizado exibe correntes de fuga de até 10E-10 A e constante dielétrica de ~13. A identificação dos parâmetros mais importantes na preparação de filmes de ZnO por spray pirólise, permitiram produzir transistores de ZnO/Al2O3 com mobilidades de ~4,5 cm2/Vs. Os sensores UV, usando transistores de ZnO/SiO2 apresentaram mobilidades de 0,1 a 12 cm2/Vs, e indicaram que a sensibilidade do sensor UV depende de parâmetros relacionados as condições de operação do dispositivo. Portanto, mostra-se que é fundamental a compreensão dos parâmetros envolvidos na produção dos dispositivos, pois isto permite refinar o processo na busca pela alta performance de dispositivos de baixo custo, bem como, otimizar os dispositivos para aplicações como sensor de radiação UV.
ZnO thin film transistors have been applied as ultraviolet (UV) radiation sensors in order to prevent damage to skin's health. However, the performance of ZnO transistor depends on the preparation conditions of both ZnO layer and gate dielectric. This work aims to produce and evaluate ZnO/Al2O3 transistors by studying simultaneously the parameters regarding the preparation of ZnO and Al2O3 layers, as well as the fabrication of ZnO transistors with a standard dielectric (ZnO/SiO2), under different conditions of working. It is intended to investigate the conditions to apply ZnO transistors as UV sensor. The experiments involve the deposition of ZnO films by sputter coating and spray pyrolysis of a solution of zinc acetate. SiO2 dielectric was commercially purchased, while Al2O3 was grown by anodization. The transistors were fabricated under different conditions, which were established by both experimental design Taguchi and Plackett-Burman methods. The responses from the characterization were interpreted by statistical techniques (ANOVA). The results showed that optimized Al2O3 films exhibit leakage current until 10E-10 A and dielectric constant of ~13. It was essential to identify the most important parameters regarding to preparation of ZnO films by pyrolysis spray in order to fabricate ZnO/Al2O3 transistors with mobilities of ~4,5 cm2/Vs. UV sensors based on ZnO/SiO2 transistors showed mobilities from 0,1 to 12 cm2/Vs and demonstrated that the sensitivity of the UV sensor depends on parameters related to working conditions. Therefore, it is of great importance the understanding of the parameters involved in the production of the devices, as it allows to refine the process in the search for the high performance of low cost materials as well as optimize the device for application as UV sensor.
ZnO thin film transistors have been applied as ultraviolet (UV) radiation sensors in order to prevent damage to skin's health. However, the performance of ZnO transistor depends on the preparation conditions of both ZnO layer and gate dielectric. This work aims to produce and evaluate ZnO/Al2O3 transistors by studying simultaneously the parameters regarding the preparation of ZnO and Al2O3 layers, as well as the fabrication of ZnO transistors with a standard dielectric (ZnO/SiO2), under different conditions of working. It is intended to investigate the conditions to apply ZnO transistors as UV sensor. The experiments involve the deposition of ZnO films by sputter coating and spray pyrolysis of a solution of zinc acetate. SiO2 dielectric was commercially purchased, while Al2O3 was grown by anodization. The transistors were fabricated under different conditions, which were established by both experimental design Taguchi and Plackett-Burman methods. The responses from the characterization were interpreted by statistical techniques (ANOVA). The results showed that optimized Al2O3 films exhibit leakage current until 10E-10 A and dielectric constant of ~13. It was essential to identify the most important parameters regarding to preparation of ZnO films by pyrolysis spray in order to fabricate ZnO/Al2O3 transistors with mobilities of ~4,5 cm2/Vs. UV sensors based on ZnO/SiO2 transistors showed mobilities from 0,1 to 12 cm2/Vs and demonstrated that the sensitivity of the UV sensor depends on parameters related to working conditions. Therefore, it is of great importance the understanding of the parameters involved in the production of the devices, as it allows to refine the process in the search for the high performance of low cost materials as well as optimize the device for application as UV sensor.
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Palavras-chave
Transitor de ZnO, Óxido de alumínio, Planejamento de experimentos, Radiação UV, ZnO transistor, Aluminum oxide, Design of experiment, UV radiation