Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes
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Data
2016-01-01
Autores
Oliveira, Alberto Vinicius de
Simoen, Eddy
Agopian, Paula Ghedini Der [UNESP]
Martino, Joao Antonio
Mitard, Jerome
Witters, Liesbeth
Collaert, Nadine
Thean, Aaron
Claeys, Cor
IEEE
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Título de Volume
Editor
Ieee
Resumo
One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 cm(2)/Vs at 77 K is reported for both STI processes, as a result of the compressive strain in the channel. Regarding the OFF-state region, it is found that the substrate current plays an important role at room temperature and for long channels. It decreases up to three orders of magnitude from room temperature down to 200 K, as long as the p-n junction reverse current from the drain to bulk dominates the substrate current.
Descrição
Palavras-chave
Ge pFinFET, long strained device, low temperature operation, STI first, STI last
Como citar
2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2016.