Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform
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2017-07-31
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This review demonstrates the potential of low frequency noise diagnostics for the characterization of Ge-based and III-V technologies processed on a Si platform. The analysis of traps in both gate dielectrics and semiconductor films is illustrated for state-of-the-art devices.
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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 288-293.