The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
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Data
2017-11-15
Autores
Teixeira, Fernando F.
Agopian, Paula G. D. [UNESP]
Barraud, Sylvain
Vinet, Maud
Faynot, Olivier
Martino, Joao A.
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Resumo
The goal of this work is analyze for the first time the low-energy proton irradiation elfects on p and n-channel SOI Ω-Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.
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back leakage current, Nanowire, oxide charger, proton irradiation
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SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.